According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...

Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

To provide higher efficiency for industrial applications, Vishay Intertechnology has introduced a new 80 V TrenchFET Gen IV n ...

This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...

Toshiba Electronics Europe has announced volume shipments of its 3rd generation, 650V SiC MOSFETs in the compact DFN8x8 ...

SiC and GaN company Navitas Semiconductor has appointed Cristiano Amoruso to the company’s board of directors, effective ...

MEC175xB controllers are compatible with MPLAB ® X Integrated Development Environment (IDE), and supported by example ...

STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features ...