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SciTech Daily20d
Diamond Devices Break Limits: Scientists Unveil New High-Performance Nuclear-Grade Transistor
A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS ...
scmp.com23d
World’s first 1-nanometre RISC-V chip made in China with 2D materials
until now the most complex 2D semiconductor digital circuit – developed by the Vienna University of Technology in 2017 – contained just 115 transistors. “[This is because] carving the same ...
C&EN24d
Analysis of the Ambipolar Conduction of Tin Monoxide Thin-Film Transistors with Indium Tin Oxide Electrodes
Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea ...
IEEE26d
High-Performance Dual-Gate In-Sn-Zn-O Thin-Film Transistors With Optimized Gate Dielectrics
Abstract: Abstract.In this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) ...
C&EN28d
Control of Donor–Acceptor Conjugated Polymer Crystallization for Optimized Film Structures in Organic Transistors
Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, School of Materials Science and Engineering, Hunan University of Science and Technology, 2 Taoyuan Street, ...