Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Researchers present new experimental and theoretical results for the bound electron g-factor in lithium-like tin which has a much higher nuclear charge than any previous measurement. The experimental ...

Researchers from the Max-Planck-Institut fuer Kernphysik present new experimental and theoretical results for the bound ...

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...

Archer Materials, a developer quantum technology for medical diagnostics, has signed an agreement with Paragraf.

Abstract: In this article, an L-shaped tunnel field-effect transistor (LTFET)-based one-transistor dynamic ... In addition, we observed that the impact of ion irradiation on the proposed cell exhibits ...

Macworld 2027 is the 20th anniversary of the iPhone, and it appears that Apple has some big plans in store. The Information and Bloomberg’s Mark Gurman reported that Apple is going to dramatically ...

This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a ...

Abstract: This study introduces a cross field-effect transistor (CrossFET) design, which features two orthogonally crossed transistors: an n-channel field-effect transistor (NFET) and a p-channel ...