Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

Kuball added that potential road safety improvements from advanced driver assistance systems (ADAS) and industrial automation ...

A technical paper titled “Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors” was ...

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to ...

Not only do our 750 volt GaN transistors accommodate voltage spikes better than equivalent rated silicon MOSFETs, but as the only GaN supplier with devices rated at 900 volts, 1250 volts and 1700 ...

Efficient Power Conversion (EPC), a developer of enhancement-mode gallium nitride (GaN) power transistors and ICs, has announced that it is making available the EPC2366. 40 V GaN power transistor ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...

The lateral High Electron Mobility Transistor (HEMT) enables monolithic integration ... to create the various sub-circuits of the driver. Figure 1: Simplified schematic of the GaN-based resonant gate ...

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...

Abstract: This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n±GaN source layer was performed ...