Explore how SiC and GaN are redefining power-supply design to meet the growing demands of AI SoCs. Large language models ...

The lateral High Electron Mobility Transistor (HEMT) enables monolithic integration ... to create the various sub-circuits of the driver. Figure 1: Simplified schematic of the GaN-based resonant gate ...

Efficient Power Conversion (EPC), a developer of enhancement-mode gallium nitride (GaN) power transistors and ICs, has announced that it is making available the EPC2366. 40 V GaN power transistor ...

Engineers from Ohio State University are claiming to have opened the door to the fabrication of far smaller AlN/GaN HEMTs ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to ...

Infineon’s 650-V G5 bidirectional switch integrates two switches in a single device to actively block current and voltage in ...

Bi-directional ‘loss-less’ current sensing is included to measure both forward current, and recirculating currents between switching coil phases – an autonomous freewheeling function switches on the ...

They will also demonstrate the use of a conventional GaN transistor with a gate contact as a bidirectional switch in a 3-level T-type converter. Both results were achieved as part of the ...

Researchers developed a high-performance GaN transistor using a latch effect, paving the way for faster, more reliable 6G technologies and next-gen global communications. (Nanowerk News) Self-driving ...

Navitas announced a production-ready 12-kW PSU reference design that achieves 97.8% efficiency for hyperscale AI data centers ...