Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

The KiCAD schematic shows a typical high-power driver ... these operate in a half-bridge configuration with identical N-channel GaN transistors (specifically part EPC2361) driven by dedicated ...

Semiconductors are the foundation of electronic and Internet of Things (IoT) devices and telecommunication equipment. They ...

GaN’s high mobility improves switching speed and reduces device resistance, while the short interconnect between the two transistors minimizes parasitic losses.[⁠2] Fig. 2: Schematic (a) and structure ...

Working with AMD, Renesas has created a power supply design, using radiation-tolerant ICs and GaN power devices ... version – with the core power rail components taking up 104cm 2. Schematics, bill-of ...

In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

Researchers at the Oak Ridge National Laboratory (ORNL) recently successfully developed a transistor fashioned out of Gallium Nitride (GaN) that can withstand the heat and radiation near the core ...

The 40V device, IGK080B041S, is a normally-off monolithic Schottky gate transistor that can block voltages in both directions, part of the company’s G3 GaN family, being made on 200mm wafers. It is ...