SDV architecture has transitioned from function-based grouping ... He has been invited to speak at notable global events, ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

New non-volatile tech writes a bit in 400 picoseconds A team of boffins at Fudan University have emerged from their ...

The GlobalFoundries’ VP of Automotive discusses how semiconductors will form the basis for user-friendly SDV advancements.

Researchers at Fudan University have announced a breakthrough in flash memory with what they claim is the fastest device ever ...

Chinese scientists at Fudan University unveil Poxaio, the world’s fastest flash memory, capable of rewriting data in just 400 ...

Chinese scientists have unveiled 'Poxiao', the world's fastest hard drive, potentially heralding a new era in flash memory ...

Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times faster than before.

Chinese researchers have engineered Poxiao, a groundbreaking flash memory, achieving unprecedented speeds of 400 picoseconds ...

As AI systems demand faster, denser memory, researchers in Shanghai have developed a flash device that operates at picosecond ...

A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash ...