GaN power FETs are revolutionizing power electronics with higher efficiency, compactness, and new applications in AI, EVs, ...

Abstract: We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel.

A team of researchers from Peking University claims to have developed a non-silicon transistor that is faster and more ...