More information: Thorsten Lill et al, Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride, ...

SiO2 (Silicon Dioxide): A dielectric material that serves as an etch stop layer in multilayer semiconductor structures. Etch Selectivity: The ratio of the etch rate of one material relative to ...

It added ALE capability to its Flex dielectric etch systems for high-volume manufacturing, which employs the company’s Advanced Mixed Mode Pulsing (AMMP) technology. The AMMP tech enables ALE of ...

When the etching is done, the metal can be cleaned from the surface ... As gate lengths shrink smaller than 14 nanometers, the silicon dioxide insulator used in conventional transistors fails to ...

Phosphorus trifluoride acted as a nitrous boost for silicon dioxide etching, quadrupling the rate. They also tested ammonium fluorosilicate. The team detailed its findings in a study published in ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride. To ...

Plasma etching processes can be roughly grouped as dielectric, silicon or conductor etches. Dielectrics such as silicon dioxide and silicon nitride are best etched using fluorinated gases while ...

The findings of the experiment are listed below: For pressures less than 50 mTorr anisotropic etching was observed. The photoresist selectivity of the chlorine-based process was just 1.5:1 at lower ...

Silicon is the best-known semiconductor material. However, controlled nanostructuring drastically alters the material's properties. Using a specially developed etching apparatus, a team at HZB has ...

The researchers also studied the impact of phosphorus trifluoride, an essential ingredient when etching silicon dioxide at any significant degree. While it has been used before, the researchers ...