Using a combination of slurry and gas-phase silicon evaporation methods, researchers have developed a high-density protective ...

A team led by Washington State University has successfully recreated a millennia-old pigment first synthesized in ancient ...

pH-controlled selective etching has become a game-changer, enabling the removal of silicon dioxide with selectivity ratios exceeding 300:1. These advancements allow for the self-limiting termination ...

Phosphorus trifluoride acted as a nitrous boost for silicon dioxide etching, quadrupling the rate. They also tested ammonium fluorosilicate. The team detailed its findings in a study published in ...

The researchers also found that adding phosphorus trifluoride quadrupled the etch rate for silicon dioxide, though it only marginally increased the silicon nitride etch rate. They also investigated ...

The researchers also studied the impact of phosphorus trifluoride, an essential ingredient when etching silicon dioxide at any significant degree. While it has been used before, the researchers wanted ...

The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride. To ...

The researchers also studied the impact of phosphorus trifluoride, an essential ingredient when etching silicon dioxide at any significant degree. While it has been used before, the researchers ...

Abstract: This paper introduces a novel and simple etching technique that utilizes a mixture of sulfuric acid (H2 SO4) and hydrofluoric acid (HF). This method selectively etches silicon dioxide (SiO2) ...

This could be silicon, silicon dioxide (the insulative oxide layer) or other masking materials. The removal of these materials is done through etching, either by chemical or physical (plasma) means.