Research and development on III-nitride semiconductors gained momentum much later than other conventional semiconductors such as silicon and gallium arsenide. This was due to the difficulty in ...

Abstract: Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area >1 mm/sup 2/, on large area freestanding single-crystal ...

Abstract: Conventional Schottky diodes have a switching limit of ideality factor larger than unity due to the thermionic emission. In this work, cold source diodes (CSDs) using cold metals of ...

Large-area (1075 × 750 μm 2) blue-emitting InGaN/GaN light-emitting diodes (LEDs) fabricated on a 3 μm pitch CES exhibit ∼39% enhancement in the optical power compared to state-of-the-art, ...

† State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China ‡ Department of Physics, Jilin ...