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IEEE24d
Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 V and 4500 V SiC Power MOSFETs
The higher doping in the epitaxial region results in lower breakdown voltage, and typically leads to a lower threshold drain voltage at which single-event leakage current (SELC) occurs. Furthermore, ...
IEEE13d
A Method for Simultaneously Monitoring Gate Leakage Current and Threshold Voltage of SiC Power MOSFETs Under Repetitive Short-Circuit Stress
Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=6687316 ...
C&EN24d
Enhanced Leakage Current and On-Resistance of β Gallium Oxide Schottky Barrier Diodes Using Effective Surface Modification
Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea ...