CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless semiconductor company that was spun out of the renowned power device group at the Engineering Department of the ...

In addition to being easy to use, ICeGaN offers several other significant benefits over other GaN devices. The gate drive voltage of ICeGaN is compatible with IGBTs. Because ICeGaN integrates the ...

CAMBRIDGE, England, February 18, 2025--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C ...

ENDS About Cambridge GaN Devices Cambridge GaN Devices (CGD) is a fabless semiconductor company spun-out by Professor Florin Udrea and Dr Giorgia Longobardi from Cambridge University in 2016 to ...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics simpler to design and implement ...

Sustainable power electronics specialist Cambridge GaN Devices has closed a $32m Series C funding round, enabling the company to accelerate growth and reduce energy consumption across multiple sectors ...

The recent IEEE Electron Device Meeting featured numerous variations on this theme. For example, Florin Udrea, co-founder and CTO at Cambridge GaN Devices, combined an “integrated circuit enhancement ...

A hybrid power platform combines ICeGaN HEMT devices and silicon IGBTs to deliver high efficiency at reduced cost. Targeting electric-vehicle (EV) powertrain applications over 100 kW, a hybrid ...

Learn more about how GaN is changing the landscape of power electronics and what to consider when designing it into a power supply. Gallium nitride (GaN) is breaking out in the world of power ...

CGD is currently leading a $10m European-funded project developing GaN-based modules for low and ... for PCB-embedded power systems with GaN devices (P3EP) and recently launched a project to ...