Dr. Ismail Kashkoush, JST’s new Chief Technology Officer, shares his thoughts as to the challenges and opportunities of his new job role - overseeing the development and strategy for JST’s engineering ...
Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...
While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...
At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...
Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
Chinese GaN firm Innoscience and its subsidiary Innoscience (Suzhou) Semiconductor have filed a lawsuit against Infineon Technologies (China), its subsidiary Infineon Technologies (Wuxi) and a ...
Forvia Hella, an international automotive supplier, has selected Infineon's new CoolSiC automotive MOSFET 1200 V for its next ...
Toshiba Electronics Europe has introduced the TB67S559FTG 50V/3.0A stepper motor driver IC that supports constant current control with built-in current detection. Housed in a 5.0mm x 5.0mm QFN32 ...
Infineon Technologies is added new isolated gate driver ICs for electric vehicles to its EiceDRIVER family.
According to Mi2-factory, chip producers buy EFII to save costs, increase performance increase and enable design innovations ...