According to a study published in Advanced Functional Materials, the refined technique can bypass the high-temperature ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...

This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

Navitas Semiconductor, maker of GaNFast GaN and GeneSiC SiC power semiconductors, has announced a collaboration with NVIDIA ...

At the heart of Innovate Together was the launch of the SiC Open R&D Line. Designed to enable joint SiC innovation between ...

Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...

To provide higher efficiency for industrial applications, Vishay Intertechnology has introduced a new 80 V TrenchFET Gen IV n ...

Toshiba Electronics Europe has announced volume shipments of its 3rd generation, 650V SiC MOSFETs in the compact DFN8x8 ...

Pictured above: Pulsed-mode MOCVD is far better at producing silicon-doped AlN layers than conventional MOCVD, according to current-voltage transmission line measurements using electrodes with 4 µm ...

Facing competition from Chinese rivals and weak demand in industrial and automotive markets, Wolfspeed is preparing to file for Chapter 11 bankruptcy within weeks, according to the Wall Street Journal ...

Nano2® 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed to provide true buffering for 250 V applications with unpredictable ...