Professor Zhou Peng and his team at Fudan University completely reconfigured the structure of Flash memory where instead of traditional silicon, they used two-dimensional Dirac graphene ...

"We also show that the channel length of the ultrafast flash memory can be scaled down to sub-10 nm, which is below the physical limit of silicon flash memory. Our sub-10 nm devices offer non ...

NAND flash memory is a type of nonvolatile data storage ... these stacks involves carving holes into alternating layers of silicon oxide and silicon nitride. The holes can be etched by exposing ...

SUNNYVALE, Calif. July 23, 2003 - SST (Silicon Storage Technology, Inc., NASDAQ: SSTI), a leader in flash memory technology, and 1st Silicon, Malaysia's leading semiconductor foundry, today announced ...

set out to close this performance gap by rethinking the physical structure of flash memory. Rather than using conventional silicon, the researchers turned to graphene – a two-dimensional ...

Silicon Motion stock traded weaker since my buy call in May, down 25%, but I see a turnaround moment ahead. Silicon Motion Technology, a leader in NAND flash controllers, faces near-term market ...

Silicon Labs launches its first Series 3 wireless SoCs, built on the 22-nm process node, targeting line-powered and ...

Silicon Labs has announced the first products of its Series 3 portfolio targeting the next generation of IoT devices.

they developed a superfast flash memory device with an 8-nanometre channel length, surpassing the physical size limit of silicon-based flash memory, which was around 15 nanometres. The “Poxiao ...