Professor Zhou Peng and his team at Fudan University completely reconfigured the structure of Flash memory where instead of traditional silicon, they used two-dimensional Dirac graphene ...

"We also show that the channel length of the ultrafast flash memory can be scaled down to sub-10 nm, which is below the physical limit of silicon flash memory. Our sub-10 nm devices offer non ...

Published in Nature, the work replaces sluggish silicon channels with two-dimensional ... and the design paves the way for future high-speed flash memory.” Dubbed “PoX,” the device uses ...

Silicon Motion stock traded weaker since my buy call in May, down 25%, but I see a turnaround moment ahead. Silicon Motion Technology, a leader in NAND flash controllers, faces near-term market ...

set out to close this performance gap by rethinking the physical structure of flash memory. Rather than using conventional silicon, the researchers turned to graphene – a two-dimensional ...

Micron is fleshing out its SSD storage with a couple of new products through its Crucial brand, including a blazing-fast SSD ...

Silicon Labs launches its first Series 3 wireless SoCs, built on the 22-nm process node, targeting line-powered and ...

Silicon Labs has announced the first products of its Series 3 portfolio targeting the next generation of IoT devices.

SanDisk describes HBF as stacking up to 16 layers of BiCS 3D NAND with through-silicon vias (TSVs). A logic layer enables massively-parallel access to the flash memory sub-arrays. This allows for ...

they developed a superfast flash memory device with an 8-nanometre channel length, surpassing the physical size limit of silicon-based flash memory, which was around 15 nanometres. The “Poxiao ...

Learn more about whether FormFactor, Inc. or Silicon Motion Technology Corporation is a better investment based on AAII's A+ ...