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IEEE4d
Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell–Wagner Effect and Related Model
Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV ... Remarkably, we demonstrate that such an effect is ...
The Cool Down on MSN2d
Researchers spark major shift with brain-inspired computing breakthrough: 'The opportunities for growth are immense'
Researchers have discovered that incipient ferroelectricity in material used for transistors can help improve computing.
IEEE6d
James Tufnail
Charge Carriers,Coated Conductors,High Field,Ionizing Radiation,Irradiated Samples,Neutron Flux,Neutron Irradiation,Oxygen Ions,Rare Earth Elements,Superconducting ...
C&EN4d
High-Field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States ...