Kuball added that potential road safety improvements from advanced driver assistance systems (ADAS) and industrial automation ...

Researchers developed a high-performance GaN transistor using a latch effect, paving the way for faster, more reliable 6G ...

GaN power FETs are revolutionizing power electronics with higher efficiency, compactness, and new applications in AI, EVs, robotics, and next-gen consumer devices.

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to ...

Engineers from Ohio State University are claiming to have opened the door to the fabrication of far smaller AlN/GaN HEMTs ...

They will also demonstrate the use of a conventional GaN transistor with a gate contact as a bidirectional switch in a 3-level T-type converter. Both results were achieved as part of the ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

Many attempts have been made, and are continuing, in the creation of a manufacturable vertical GaN (vGaN) transistor. The lack of large diameter ... Figure 2: Cross-sectional schematic of the vGaN ...

The KiCAD schematic shows a typical high-power driver ... these operate in a half-bridge configuration with identical N-channel GaN transistors (specifically part EPC2361) driven by dedicated ...