Kuball added that potential road safety improvements from advanced driver assistance systems (ADAS) and industrial automation ...

Navitas announced a production-ready 12-kW PSU reference design that achieves 97.8% efficiency for hyperscale AI data centers ...

Researchers developed a high-performance GaN transistor using a latch effect, paving the way for faster, more reliable 6G ...

GaN power FETs are revolutionizing power electronics with higher efficiency, compactness, and new applications in AI, EVs, robotics, and next-gen consumer devices.

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to ...

Engineers from Ohio State University are claiming to have opened the door to the fabrication of far smaller AlN/GaN HEMTs ...

Explore how SiC and GaN are redefining power-supply design to meet the growing demands of AI SoCs. Large language models ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...

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Abstract: This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n±GaN source layer was performed ...

The DNA of CGD, if you like.” One of the primary strengths of ICeGaN is that it provides ease of use. “You can essentially treat a GaN transistor like a MOSFET,” says Murphy. Due to this, it’s ...