GaN power FETs are revolutionizing power electronics with higher efficiency, compactness, and new applications in AI, EVs, ...

Abstract: We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel.

A team of researchers from Peking University claims to have developed a non-silicon transistor that is faster and more ...

Researchers at UChicago PME and Argonne National Lab developed an AI model to accelerate the design of chemical sensors for detecting environmental toxins.

The mechanism that stabilizes new ferroelectric semiconductors also creates a conductive pathway, which could make them ...

Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen518060, China Key Laboratory of Marine ...

This transistor is a gate-all-around field-effect transistor (GAAFET). Unlike previous leading transistor designs like the fin field-effect transistor (FinFET), a GAAFET transistor wraps sources ...

The design incorporates metasurface panels with internally coupled circuit elements, including metal-oxide-semiconductor field-effect transistors ... In their proof-of-concept experiments ...

The design incorporates metasurface panels with internally coupled circuit elements, including metal-oxide-semiconductor field-effect transistors (MOSFETs ... In their proof-of-concept experiments, ...