Abstract: We propose a process combining metal-assisted chemical etching and a spacer patterning technique to fabricate dense, vertical silicon nanotubes (SiNTs) with sub-60 nm wall thickness, which ...

† GREMI-UMR 7344-CNRS-University of Orleans, 14 Rue d’Issoudun BP 6744, F-45067, France ‡ CEMHTI-UPR 3079-CNRS-University of Orleans, 1D Avenue de la Recherche Scientifique, F-45071, France § ICMN UMR ...

Silicon nitride, silicon dioxide, phosphosilicate glass, polysilicon, single-crystal silicon, molybdenum, and aluminum are etched by parallel-plate RF diode reactors. Resist patterns are used as ...

We report the fabrication of nanoporous silicon (nPSi) electrodes via electrochemical etching to form a porous Si layer with controllable thickness and pore size. Varying the etching time and ...