Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

Vishay Intertechnology has introduced 27 standard and Trench MOS Barrier Schottky (TMBS) surface-mount rectifiers in the low ...

The latest package in Vishay’s Power DFN family, the DFN33A features a compact 3.3 mm by 3.3 mm footprint and an extremely low typical height of 0.88 mm, allowing the Vishay General Semiconductor ...

The high-performance SiC diodes are also notable for their low reverse leakage (IR) at 20µA (max.) which minimises heat ...

According to the company, the industry-leading FOM, calculated as FOM=QC×VF, is attributed to: negligible switching losses, ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC ...

Abstract: The impact of edge termination design on heavy-ion induced single-event leakage current (SELC) and single-event burnout (SEB) is investigated in homojunction GaN vertical PIN diodes. The ...