At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...

Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...

Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...

Forvia Hella, an international automotive supplier, has selected Infineon's new CoolSiC automotive MOSFET 1200 V for its next ...

Chinese GaN firm Innoscience and its subsidiary Innoscience (Suzhou) Semiconductor have filed a lawsuit against Infineon Technologies (China), its subsidiary Infineon Technologies (Wuxi) and a ...

Infineon Technologies is added new isolated gate driver ICs for electric vehicles to its EiceDRIVER family.

According to Mi2-factory, chip producers buy EFII to save costs, increase performance increase and enable design innovations ...

It can deliver up to 600 mA of output current and is claimed to offer the industry’s lowest operating quiescent current (Iq) ...

Nordic Semiconductor has announced a further addition to its nPM family of Power Management ICs (PMICs), for wireless mice ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...