Professor Zhou Peng and his team at Fudan University completely reconfigured the structure of Flash memory where instead of traditional silicon, they used two-dimensional Dirac graphene ...

"We also show that the channel length of the ultrafast flash memory can be scaled down to sub-10 nm, which is below the physical limit of silicon flash memory. Our sub-10 nm devices offer non ...

SUNNYVALE, Calif. July 23, 2003 - SST (Silicon Storage Technology, Inc., NASDAQ: SSTI), a leader in flash memory technology, and 1st Silicon, Malaysia's leading semiconductor foundry, today announced ...

Published in Nature, the work replaces sluggish silicon channels with two-dimensional ... and the design paves the way for future high-speed flash memory.” Dubbed “PoX,” the device uses ...

Micron is fleshing out its SSD storage with a couple of new products through its Crucial brand, including a blazing-fast SSD ...

Silicon Labs launches its first Series 3 wireless SoCs, built on the 22-nm process node, targeting line-powered and ...

set out to close this performance gap by rethinking the physical structure of flash memory. Rather than using conventional silicon, the researchers turned to graphene – a two-dimensional ...

Silicon Labs has announced the first products of its Series 3 portfolio targeting the next generation of IoT devices.

they developed a superfast flash memory device with an 8-nanometre channel length, surpassing the physical size limit of silicon-based flash memory, which was around 15 nanometres. The “Poxiao ...