Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

b) 3D schematic illustrations and epitaxial structures of ... A significant innovation was the development of a rotationally symmetric transistor design for GaN devices, simplifying alignment during ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. CoolGaN Transistors G5 with integrated Schottky diode ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

EPC has created a GaN transistor dc-dc converter demo board that converts an input between 36 and 60V to a regulated 13V 16A output. Called EPC9195, it is a synchronous buck converter built around a ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...