Infineon is shipping the CoolSiC Schottky diode 2000 V G5 product family – its first discrete SiC diode with a breakdown voltage of 2000V – in a TO-247-2 package. The product family fits applications ...

Next are a close look at Schottky diodes followed by p-n diodes, with a focus on the key figures of merit including the on-resistance, breakdown voltage and diode capacitance. For each diode, the ...

the fabricated diamond/ε-Ga 2 O 3 heterojunction diode exhibits notable rectifying characteristics, with an on−off ratio ...

One is laid bare by [WizardTim], as he cross-sections a 20KV high-voltage diode. A conventional low-voltage silicon diode has a forward voltage drop of about 0.7V and a relatively low maximum ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

Capacitance-voltage characteristics, Impact ionization, Avalanche breakdown, Avalanche breakdown voltages, Tunneling current, Zener breakdown, Energy band diagram of pn junction under forward bias, ...

The diode family perfectly matches the CoolSiC MOSFETs 2000V in the TO-247Plus-4 HCC package, which the company launched in the spring of 2024. In addition to the TO-247-2 package, the diode is also ...